Contents

Russian Microelectronics


Vol. 50, No. 1, 2021


Influence of Deposition Conditions and Ion-Plasma Treatment of Thin Cobalt Films on Their Electrical Resistivity

I. I. Amirov, R. V. Selyukov, V. V. Naumov and E. S. Gorlachev p. 1  abstract

Metallization of Vias in Silicon Wafers to Produce Three-Dimensional Microstructures

A. I. Vorobjova, V. A. Labunov, E. A. Outkina and D. V. Grapov p. 8  abstract

Influence of Resist Spreading during Its Dry Electron-Beam Etching on a Lateral Resolution

A. G. Isaev, F. A. Sidorov and A. E. Rogozhin p. 19  abstract

Kinetics of the Volumetric and Heterogeneous Processes in the Plasma of a C4F8 + O2 + Ar Mixture

A. M. Efremov, D. B. Murin, A. M. Sobolev and K.-H. Kwon p. 24  abstract

Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions

S. D. Brinkevich, D. I. Brinkevich and V. S. Prosolovich p. 33  abstract

Effect of a Mixture’s Composition on the Electrophysical Parameters and Emission Spectra of Hydrogen Chloride Plasma with Chlorine and Helium

S. A. Pivovarenok, D. B. Murin and D. V. Sitanov p. 39  abstract

Experimental Study of the Influence of the Porosity of Thin-Film Silicon-Based Anodes on Their Charge-Discharge Characteristics

T. L. Kulova, L. A. Mazaletskii, A. A. Mironenko, A. S. Rudyi, A. M. Skundin, Yu. S. Tortseva and I. S. Fedorov p. 45  abstract

Numerical Simulation of Cryogenic Etching: Model with Delayed Desorption

M. K. Rudenko, A. V. Myakon’kikh and V. F. Lukichev p. 54  abstract

Effect of Process-Related Impurities on the Electrophysical Parameters of a MOS Transistor

V. B. Odzhaev, A. N. Petlitskii, V. S. Prosolovich, V. A. Filipenya, V. Yu. Yavid and Yu. N. Yankovskii p. 63  abstract

Domain Wall Precession in a Narrow Magnetic Nanowire

O. S. Trushin and N. I. Barabanova p. 69  abstract