Contents
Semiconductors
Vol. 42, No. 12, 2008
Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Study of the Intermediate Layer at the n+-CdS/p-CdTe Interface
S. A. Muzafarova, B. U. Atbaev, Sh. A. Mirsagatov,
K. Durshimbetov, and Zh. Zhanabergenov p. 1377 abstract
Electronic and Optical Properties of Semiconductors
Energy Spectrum of Charge Carriers in Ag2Te
S. A. Aliyev, Z. F. Agayev, and R. I. Selimzadeh p. 1383 abstract
Calculation of Capacitance of Self-Compensated Semiconductors with Intercenter Hops
of One and Two Electrons (by the Example of Silicon with Radiation Defects)
N. A. Poklonski, S. A. Vyrko, and A. G. Zabrodski p. 1388 abstract
Subterahertz Self-Oscillations in Ultrafast Self-Modulation
of Optical Absorption in GaAs
N. N. Ageeva, I. L. Bronevo, and A. N. Krivonosov p. 1395 abstract
Semiconductor Structures, Interfaces, and Surfaces
Type II Broken-Gap GaSb1–xAsx/InAs Heterojunction (x < 0.15):
Evolution of the Band Diagram for the Ternary Solid Solution
V. V. Romanov, K. D. Moiseev, T. I. Voronina, T. S. Lagunova, and Yu. P. Yakovlev p. 1403 abstract
Giant Burst of Impact Ionization in a p–n Junction of the 6H-SiC Polytype
V. I. Sankin and P. P. Shkrebi p. 1408 abstract
Electrical Properties of n-HgCdTe Heteroepitaxial Layers Modified by Ion Etching
M. Pociask, I. I. Izhnin, S. A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, V. S. Varavin,
K. D. Mynbaev, and V. I. Ivanov-Omskii p. 1413 abstract
Surface States on the n-InN–electrolyte Interface
A. A. Gutkin, M. É. Rudinsky, P. N. Brunkov, A. A. Klochikhin,
V. Yu. Davydov, H.-Y. Chen, and S. Gwo p. 1416 abstract
Low-Dimensional Systems
AlGaN-based Quantum-Well Heterostructures for Deep Ultraviolet Light-Emitting Diodes
Grown by Submonolayer Discrete Plasma-assisted Molecular-Beam Epitaxy
V. N. Jmerik, A. M. Mizerov, T. V. Shubina, A. V. Sakharov, A. A. Sitnikova, P. S. Kop’ev,
S. V. Ivanov, E. V. Lutsenko, A. V. Danilchyk, N. V. Rzheutskii, and G. P. Yablonskii p. 1420 abstract
The Binding Energy of Excitons and X + and X – Trions in One-Dimensional Systems
M. A. Semina, R. A. Sergeev, and R. A. Suris p. 1427 abstract
Physics of Semiconductor Devices
Radiation Hardness of SiC Subjected to Alternating Irradiation and Annealing
A. M. Ivanov, N. B. Strokan, and A. A. Lebedev p. 1434 abstract
An Efficient Electron-Beam-Pumped Semiconductor Laser
for the Green Spectral Range Based on II–VI Multilayer Nanostructures
M. M. Zverev, N. A. Gamov, D. V. Peregoudov, V. B. Studionov, E. V. Zdanova,
I. V. Sedova, S. V. Gronin, S. V. Sorokin, S. V. Ivanov, and P. S. Kop’ev p. 1440 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Specific Features of Formation of GaAs Nanowire Crystals
during Molecular Beam Epitaxy on Different Silicon Surfaces
Yu. B. Samsonenko, G. É. Cirlin, V. A. Egorov, N. K. Polyakov,
V. P. Ulin, and V. G. Dubrovski p. 1445 abstract
Growth of 4H-Polytype Silicon Carbide Ingots on Seeds
D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev, and Yu. M. Tairov p. 1450 abstract
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