Contents
Semiconductors


Vol. 42, No. 12, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Atomic Structure and Nonelectronic Properties of Semiconductors

Study of the Intermediate Layer at the n+-CdS/p-CdTe Interface

S. A. Muzafarova, B. U. Aframe0tbaev, Sh. A. Mirsagatov,
K. Durshimbetov, and Zh. Zhanabergenov
p. 1377  abstract


Electronic and Optical Properties of Semiconductors

Energy Spectrum of Charge Carriers in Ag2Te

S. A. Aliyev, Z. F. Agayev, and R. I. Selimzadeh p. 1383  abstract

Calculation of Capacitance of Self-Compensated Semiconductors with Intercenter Hops
of One and Two Electrons (by the Example of Silicon with Radiation Defects)

N. A. Poklonski, S. A. Vyrko, and A. G. Zabrodskiframe1 p. 1388  abstract

Subterahertz Self-Oscillations in Ultrafast Self-Modulation
of Optical Absorption in GaAs

N. N. Ageeva, I. L. Bronevoframe2, and A. N. Krivonosov p. 1395  abstract


Semiconductor Structures, Interfaces, and Surfaces

Type II Broken-Gap GaSb1–xAsx/InAs Heterojunction (x < 0.15):
Evolution of the Band Diagram for the Ternary Solid Solution

V. V. Romanov, K. D. Moiseev, T. I. Voronina, T. S. Lagunova, and Yu. P. Yakovlev p. 1403  abstract

Giant Burst of Impact Ionization in a pn Junction of the 6H-SiC Polytype

V. I. Sankin and P. P. Shkrebiframe3 p. 1408  abstract

Electrical Properties of n-HgCdTe Heteroepitaxial Layers Modified by Ion Etching

M. Pociask, I. I. Izhnin, S. A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, V. S. Varavin,
K. D. Mynbaev, and V. I. Ivanov-Omskii
p. 1413  abstract

Surface States on the n-InN–electrolyte Interface

A. A. Gutkin, M. É. Rudinsky, P. N. Brunkov, A. A. Klochikhin,
V. Yu. Davydov, H.-Y. Chen, and S. Gwo
p. 1416  abstract


Low-Dimensional Systems

AlGaN-based Quantum-Well Heterostructures for Deep Ultraviolet Light-Emitting Diodes
Grown by Submonolayer Discrete Plasma-assisted Molecular-Beam Epitaxy

V. N. Jmerik, A. M. Mizerov, T. V. Shubina, A. V. Sakharov, A. A. Sitnikova, P. S. Kop’ev,
S. V. Ivanov, E. V. Lutsenko, A. V. Danilchyk, N. V. Rzheutskii, and G. P. Yablonskii
p. 1420  abstract

The Binding Energy of Excitons and X + and X Trions in One-Dimensional Systems

M. A. Semina, R. A. Sergeev, and R. A. Suris p. 1427  abstract


Physics of Semiconductor Devices

Radiation Hardness of SiC Subjected to Alternating Irradiation and Annealing

A. M. Ivanov, N. B. Strokan, and A. A. Lebedev p. 1434  abstract

An Efficient Electron-Beam-Pumped Semiconductor Laser
for the Green Spectral Range Based on II–VI Multilayer Nanostructures

M. M. Zverev, N. A. Gamov, D. V. Peregoudov, V. B. Studionov, E. V. Zdanova,
I. V. Sedova, S. V. Gronin, S. V. Sorokin, S. V. Ivanov, and P. S. Kop’ev
p. 1440  abstract


Fabrication, Treatment, and Testing of Materials and Structures

Specific Features of Formation of GaAs Nanowire Crystals
during Molecular Beam Epitaxy on Different Silicon Surfaces

Yu. B. Samsonenko, G. É. Cirlin, V. A. Egorov, N. K. Polyakov,
V. P. Ulin, and V. G. Dubrovskiframe4
p. 1445  abstract

Growth of 4H-Polytype Silicon Carbide Ingots on frame5 Seeds

D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev, and Yu. M. Tairov p. 1450  abstract


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